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Experimental and numerical study of a RF plasma source in a DC-grounded electrode configuration
Courtesy of Hiden Analytical Ltd.
Capacitively coupled plasma (CCP) sources have a variety of important applications, which make use of the interaction of active species (ions and radicals) created in the plasma volume with the surface materials of the electrodes. Due to the radio frequency (RF) excitation, the electrode materials are not restricted to be conducting, as RF current can flow through dielectric materials as well. For plasma sources with largely uneven powered and grounded surfaces (where usually the powered electrode is much smaller than the grounded surface), a significant negative self-bias voltage VDC develops and the plasma potential Vp is lower as compared to that in symmetrical systems. However, one can eliminate the self-bias voltage by grounding the powered electrode for the DC component. DC grounding the powered electrode has strong implications on the plasma properties and leads to an increase of the plasma potential to several hundreds of volts (as compared to few tens of volts commonly observed in typical highly asymmetric CCPs). In this research, we studied in depth the properties of CCP with DC-grounded electrodes experimentally as well as via simulations. We also studied the influence of the conducting properties of the powered electrode’s surface (from 100% conducting to 0% conducting) on the resulting plasma properties.
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