Towards high efficiency solar cells with new material

While previous developed materials aimed at high efficiency used several junctions of indiumgallium- nitride (InGaN) with different proportions of indium and gallium side by side to cover a wider solar light spectrum, the newly developed solution treats a zincmanganese-tellurium (ZnMnTe) alloy in such a way that a single junction is able to have a photovoltaic response to almost the entire solar spectrum. Usually a photovoltaic semiconductor has one band gap and it converts solar light in the frequency range corresponding to this characteristic band gap energy.

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