Intevac ENERGi - Ion Implant System
From Solar
Intevac ENERGi is an innovative ion implant system specifically designed to meet the cost, efficiency and productivity requirements of solar cell manufacturing. ENERGi, a continuous flux ion source system, offers manufacturers the most cost-effective, production-proven system.
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Product Details
Intevac ENERGi incorporates enabling technologies that have demonstrated improved cell performance and lowest manufacturing cost per watt. Based on our industry leading platforms, ENERGi meets the solar industry efficiency roadmap today and is extendible to enable advanced cell designs and increased efficiency requirements. The system is designed with Intevac’s signature small footprint and excellent serviceability.
Intevac ENERGi Technology
- Capability to enable advanced metallization paste requirements with appropriate surface concentration and junction depth
- High dose rate and single pass results in full amorphization through simple defect formation close to the wafer surface. A simple annealing process fully recrystallizes the silicon through solid phase epitaxial regrowth (SPER), leaving behind no defects.
- Implant provides potential induced degradation (PID) resistant cells in modules without additional cost
- High cell efficiencies
- 19.96% (front contact)
- High Voc
- 646mV
- Narrow efficiency distribution
- N-type cells, IBC, bifacial, MWT
Near Surface Amorphization and Regrowth
Near Surface Amorphization and Regrowth
- Due to high dose rate and single pass
- Good/complete amorphization is desired for best annealing
- This layer will fully recrystallize during anneal
- Solid phase epitaxial recrystallization (SPER)
- PID free
Intevac ENERGi Productivity
Intevac ENERGi Productivity
In today’s high volume p-type front contact cell lines, ion implant can raise the efficiency in the line above 19.5% average and exhibit a comprehensive CoO of < 0.8 U.S. cents/watt.
As cell process technology is driven toward 20% cell efficiency and higher with more complex flows such as PERC, n-type, bifacial or IBC, the opportunity for ion implant to reduce process steps and costs is even greater.
With the ENERGi ion implant system the emitter is formed at a faster rate with superior uniformity and better repeatability than diffusion furnaces can attain. The flow is also simplified due to single sided doping and the elimination of the acid glass etch.
- High throughput at 3000 wafers per hour (P and N-type)
- Fast and robust beam tuning for wide dose range
- Identical productivity for Boron and Phosphorus doping
- Simplified P and N-type process flow
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