Angstrom Sciences, Inc. products

In Diode Sputtering, there is no use of magnets and thus, no magnetic field to contain the plasma. This means that plasma ions flow freely throughout the vacuum system and activate the entire surface area of the target, increasing target utilization. However, this also means that sputtered film particles are free to move throughout the chamber, not directly to the substrate. This can significantly increase your process time. Angstrom Sciences provides diodes for all cathode sizes.

Because RF power tends to stray, it is vital in high power RF applications that the magnetron sputtering cathode is designed to rein in that power. Angstrom Sciences’ High Power RF circular magnetron is designed to deliver high RF power densities uniformly across the target surface while providing low reflected power. Angstrom Sciences creates a wide magnetic field that maximizes target active area. With less dead space, your process will see less material redeposition and minimal arcing. Additionally, our profiled magnet array yields high target utilization, minimal arcing, and long-term reliability. Circular High Power RF Magnetrons are directly cooled and available in 2`-8` outer diameters.

Advances in High Power Impulse Magnetron Sputtering (HIPIMS) or High Impact Power Magnetron Sputtering have long been pursued by modifying power supply systems that can deliver short bursts of power densities to a sputtering target. Angstrom Sciences has developed a series of circular sputtering cathodes capable of sustaining continuous power densities greater than 1500 Watts/in². Angstrom Sciences’ high power pulsed magnetron sputtering cathodes incorporate two additional cooling channels in the anode body and stem tube to maintain optimum cooling during process operation. The magnetic arrangement within the HPP design is specially optimized for high power, magnetic applications. High Power Pulsed circular magnetrons are directly cooled and available in 4`, 6`, 8` and 10` outer diameters.