Beijing Jingyuntong Technology Co., Ltd. products

JQ-900 is a kind of large-scale float-zone monocrystalline silicon furnace with the characteristic of high-reliability, high-precision and high- automation which integrates optic, mechanic and electronic together. The performance of the equipment has reached the international advanced level of similar products. It mainly produces large scale FZ monocrystalline silicon of 6-8 inch. The maximum length of the FZ monocrystalline silicon is 2500mm and the highest purity is 99.99999999%.The FZ monocrystalline silicon wafers are available for the sophisticated fields such as IGBT, SCR, infrared detector, aerospace and navigation. Furthermore, with the high photoelectric conversion efficiency of 23%, we can attempt boldly to use it on the photovoltaic industry.

JZ-460 / 660 (G7 Hot-Zone) Directional Solidification Grower adopts the directional solidification technique and uses the vertical gradient directional crystallization process for accuracy control on temperature of the heater which could effectively controls the input and output of the heat and ensure the perfect quality. It can work at a very low temperature gradient and grow more than 1200kg of silicon ingot within about 85 hours. During the crystal growing process, the directional crystal growing can be realized by the movement of the heat insulation layer.During the material charging and silicon ingot taking outprocedures, only up-down movement of the lower chamber is applied. The unit energy consumption of this type of furnace is lower than 6.5kwh/kg. JZ 460/660 can be upgraded into G5 and G6 furnace by only changing the hot-zone system.

JZJ-G6 Polycrystalline silicon ingot detection automation system is in use of manipulator arm delivering brick to assist detecting,which realizes the basic liberation of labor, reduction of the detection personnel, improvement of efficiency, and also the bump during artificial delivering that avoiding relatively increases product yield. The system employs computer lining on brick to reduce the manual calculation error, and saving detection data into electronic files to do statistics automatically to save repetitive labor on input.

As the third generation semiconductor material, silicon carbide can be used to make a new generation of high-efficiency and energy-saving power electronic devices, and is widely used in various fields such as air conditioning, photovoltaic power generation, wind power generation, high-efficiency electric motors, hybrid and pure electric vehicles, high-speed trains and so on. Silicon carbide furnace is an indispensable key equipment for producing silicon carbide crystal. The device adopts induction heating to sublimate the silicon carbide powder from the graphite crucible and deposit it on the silicon carbide seed crystal in the process gas environment, which is to grow the 6-inch silicon carbide crystal by physical gas phase transfer (PVT) method.

JD-1400 mono-crystal furnace is a flexible shaft lifting-pulling type mono-crystal furnace. It is a device used in the inert gas atmosphere using the graphite resistance heater to melt certain silicon materials for growing dislocation- free mono crystals by the Czochralski method. It can produce high-quality silicon mono-crystal required by Iarge-scaled integrated circuits. This equipment can use maximum 32inch hot-zone system with charging of maximum 500KG to grow mono-crystals of 10 inch or less(it also can customize compatible larger diameter silicon ingot). Its production capacity has increased 20% compared with the JD-1200 Mono-Crystal Furnace as a result of increased charging. It is the sister model of JD-1200 Mono-Crystal Furnace. Besides having the characteristics of the JD-1200 Mono-Crystal Furnace, it has greatly improved in design, convenient maintenance, automaticity and other performance standards.

CCZ feeder is a kind of external continuous feeding equipment for Czochralski mono-crystal furnace. Its main advantage lies in the improvement of production efficiency and the reduction of production cost. It is more suitable for the process of P-type PERC cell and N-type cell.

JD-1600 Mono-Crystal Furnace is a flexible shaft lifting-pulling type mono-crystal furnace. It is a device used in the inert gas atmosphere using the graphite resistance heater to melt certain silicon materials for growing dislocation- free mono crystals by the Czochralski method. It can produce high-quality silicon mono-crystal required by large-scaled integrated circuits. This equipment can use 30-40inch hot-zone system with maximum charging of 1000KG to grow mono-crystals of 12inch or less. It’s adaptable for “ 210 wafer” and the capacity is much improved.The equipment has the technical characteristics of the original JD series mono crystal furnace and belongs to the advanced automatic furnace type. With perfect automatic fusion function, it can realize automatic control from heating to finishing. The appearance design, maintenance convenience, degree of automation and various performance indicators in the industry are in a leading position.