Efficient Power Conversion Corporation products

Gallium Nitride (GaN) Power Devices

EPC - Automotive 15 V, 28 A Enhancement-Mode GaN Power Transistor

VDS, 15 V; RDS(on), 26 mΩ; ID, 3.4 A; Pulsed ID, 28 A; AEC-Q101 Qualified.

EPC - Enhancement-Mode GaN Power Transistor Half Bridge

VDS, 30 V; RDS(on), 19 mΩ (Q1, Control FET), 8 mΩ (Q2, Sync FET); ID, 16 A (Q1), 16 A (Q2); Pulsed ID, 50 A (Q1), 140 A (Q2); RoHS 6/6, Halogen Free.

EPC - Enhancement Mode GaN Power Transistor Half Bridge

VDS, 30 V; RDS(on), 8.2 mΩ (Q1, Control FET), 2.1 mΩ (Q2, Sync FET); ID, 10 A (Q1), 40 A (Q2); Pulsed ID, 100 A (Q1), 400 A (Q2); RoHS 6/6, Halogen Free.

EPC - Enhancement Mode Power Transistor

VDS, 30 V; RDS(on), 1.45 mΩ; ID, 90 A; Pulsed ID, 590 A; TJ150°C; RoHS 6/6, Halogen Free.