The Founding of EPC

EPC was founded in November 2007 by three engineers, with a combined 60 years of experience in advanced power management technology. EPC’s CEO Alex Lidow was the co-inventor of the silicon power MOSFET in the 1970s; and, in addition to holding positions in R&D and manufacturing, was the CEO of International Rectifier for 12 years. Over time it became clear to the founders of EPC that silicon had reached its performance limits, failing to propel innovation forward at the rate to which we had become accustomed.

EPC was founded with the foresight that GaN would be the inevitable successor to silicon in the advancement of power because of its incomparable speed, efficiency, and low cost. In fact, GaN has superior crystal properties that enable a performance advantage over silicon by as much as 1000:1.

Gallium Nitride Transistors Hit the Market

In June 2009, EPC delivered the first commercial enhancement-mode GaN (eGaN^®) transistors. These new devices were manufactured in a Taiwanese foundry designed to produce standard silicon integrated circuits creating a mature, efficient, and low cost supply chain, making its GaN transistors extraordinarily reliable and affordable. Today EPC offers more than 100 products that address a $13 Billion market.

GaN Will Crush Silicon

For the first time in 60 years there is a higher performance and lower cost option to silicon…gallium nitride. Today, leading companies the world over work with EPC to enable their next generation technologies with the power of GaN. Companies that leverage GaN can avoid being left behind with aging silicon, drive sales growth, and deliver increasing end-customer value.

EPC - Model EPC2111 - Enhancement-Mode GaN Power Transistor Half Bridge Datasheet