GaSb Specification - Specification

Gallium Antimonide Single Crystal Wafers Specifications Growth Method LEC Orientation (100), (111), (211) and (311)±0.5°, or customer required Conduction Type N P Dopant Te None Zn Carrier Concentration (cm-3) ** (2-10)x1017 (1-2)x1017 (3-10)x1017 Mobility (cm2/v.s) (1.5-3.6)x103 (6-8)x102 (5-7)x102 Resistivity (?·cm) (0.2-1.2)x10-2 (5-8)x10-2 Shape Round Diameter (mm) 50.8±.04 (2”) 76.2±.04 (3”) 101.6±.04 (4”) Thickness (µm) 500±25 600±25 700±25 Primary Flat Length (mm) 16±1 22±1 32.5±1 Secondary Flat Length (mm) 7±1 12±1 18±1 EPD (cm-2) =1000 =2000 =3000 Surface Finish S/S – both sides as sliced L/L – both sides as lapped P/S – one side polished, other side as sliced P/E – one side polished, other side etched P/P – both sides polished Package Wafer individually packaged in a fluoroware container with spider TV (for polished wafer) (µm) =20 Warp (for polished wafer) (µm) =15 ** We also provide low carrier concentration P-type and N-type 2”, 3” and 4” single crystal wafers. P-type: 1015 - 1017 cm-3 N-type: 1015 - 1016 cm-3