Topsil - Model GAN - Float Zone Silicon Wafers Datasheet

Since its introduction in the 1990s, gallium nitride (GaN) technology devices have often been grown on silicon carbide and sapphire substrates. As the technology has gradually matured, the silicon industry has responded to a market demand of overcoming the challenge of developing silicon as a more cost effective and easily available alternative for commercial GaN applications. By now, silicon has found a ready GaN market, a market which is steadily evolving.