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Model Ailesic-2000 -Activation Annealing System

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SiC power device recently became a key technology to realize a ‚low-carbon society‘. The Oxidation/Nitridization/Annealing system Ailesic 2000 from our partner Toyoko Kagaku is our solution to assure you improved performance of the SiC thermal processes and a stable mass production in the Activation Anneal Process.

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  • automatic C2C high throughput vertical furnace for up to 150mm substrates
  • operational temp. is 1200…1900°C (max. 2000°C)
  • heating rate ≤100°C, cooling time is 115min from 1900°C to 300°C
  • batch size is 25 wafers
  • high purity carbon boat
  • long life metal heater (>10 years)
  • high temperature uniformity of ±5K
  • footprint 1.25m x 4.35m

  • Activation Anneal process ( Post Implantation Anneal )