Aixtron
Model AIX G5+ C -Deposition System for Compound Semiconductors
FromAixtron
State-of-the-art Planetary reactor module for advanced GaN application on 150/200 mm substrates (Si/Sapphire/SiC) increases productivity and wafer performance. Key Benefits: Chosen by the best in the industry, Highest throughput, Lowest Cost of Ownership, Highest yield performance, 1st fully automated MOCVD platform with Cl2 in-situ cleaning and cassette-to-cassette wafer handler
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- Cost advantages of a batch reactor combined with the unique axis symmetric on-wafer uniformity of a single wafer reactor with respect to:
- wafer bow
- layer thickness, material composition, dopant concentration
- component yield
- Warm ceiling provides lowest heat flux through the wafers
- Minimized wafer curvature due to minimal vertical temperature gradients
- Enables the use of Si wafers with standard thickness
- Wafer temperature optimization through customer-specific design of the substrate pockets
- 8x150 mm
- 5x200 mm