Model AIX G5 WW C -Deposition System for Compound Semiconductors

 “Best performance for Next Generation SiC Power Electronics to address Global Mega Trends”. High throughput batch epitaxy with single wafer control - combining best of both worlds. Key Benefits: Best in class throughput and lowest cost of ownership per wafer, Single wafer performance in batch configuration for excellent epitaxial layer quality, Si fab compatible automation supports SiC power market ramp-up