Model P & N -Silicon Wafer

Dopant Boron, Ph. Size 125×125±0.5 mm, 156×156±0.5 mm. Thickness 200±20μm. Resistivity 0.5-3Ω.cm, 3-6Ω.cm. Life Time ≥10μs. Orientation±3°. Cutting Multiple wire cut. TTC ≤30μm. Perpendicularity 90° ± 0.5°. Dislocation Density ≤3000 at/ cm2. Oxygen Content ≤1.0×1018 at/ cm3. Carbon Content ≤5.0×1016 at/ cm3.