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Nanografi - Model NG01CG0103 - Monolayer Graphene on SiO2/Si Substrate
Graphene research; Supercapacitors; Catalyst; Solar energy; Graphene optoelectronics, plasmonics and nanophotonics; Graphene semiconductor chips; Conductive graphene film; Graphene computer memory; Biomaterials and Bioelectronics.
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Method of Preparation Graphene on Si/SiO2 Substrate was prepared by the following steps:
- Single layer graphene grown on copper foil
- Deposit PMMA and curing process
- Remove Cu by etching process
- Wash PMMA/Graphene in DI water
- Redeposit PMMA/Graphene onto Si substrate and curing process
- Remove PMMA with aceton
- Transparency : > 95 %
- Coverage : > 93%
- Thickness (theoretical) : 0.340 nm
- Sheet Resistance : 500-530 Ohms/sq
- Grain Size : 6-10 μm
- Size (inch) : 4``
- Dry Oxide Thickness : 300 nm
- Type : Phosphor doped / N type
- Orientation : <100>
- Resistivity : 0.001 - 0.01
- Thickness : 525 +/- 20 μm
- Front surface : One Side Polished