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The application level advantages of FD-SOI are:
Ultra low power
FD-SOI is an ultra low-voltage technology able to operate down to 0.4V at minimum energy per operation.
Energy Efficiency
FD-SOI outperforms Bulk and Finfet technologies in terms of energy efficiency at a given technology node.
Body Biasing
Body bias is a very powerful knob for PVTA compensation and performance boosting.
FD-SOI substrate relies on two primary innovations:
- Firstly, an ultra-thin layer of insulator, called the buried oxide, is positioned on top of the base silicon.
- Secondly, a ultra-thin top silicon layer is used to form the transistor channel.
The ultra-thin film FD-SOI architecture enables transistors to operate in fully depleted mode, offering an “electrical Shrink-on-Chip” solution while simplifying the manufacturing process.
Soitec FD-SOI wafers characteristics are:
- 12nm to 15nm top silicon layer
- 15 to 25nm BOX layer
- 300 mm wafer
- Atomistic uniformity and roughness
- Low defectivity