Agnitron Technology, Inc.
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Growth & R&D Services
Agnitron has a research and development MOCVD/CVD laboratory which supports the development of new MOCVD critical components and provides services for the growth of custom epitaxial structures based on Ga2O3, GaN, and related alloys for power electronic devices and UV photodetector. Additionally, Agnitron offers to develop other custom oxide and nitride epitaxial structures. This includes but is not limited to MgZnO, LiCoO2, 2D BN, and family 2D dichalcogenides, such as MoS2, MoSe2, WS2, and WSe2. The R&D facility is equipped with single and multi wafer MOCVD reactors dedicated to supporting the growth services of various materials systems.
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Services on Crystal Growth
- Grow custom structures for transistors based on GaN and Ga2O3 material systems on various substrates.
- Growth of 2D and 3D nanostructures based on GaN/AlGaN
- Provide onsite MOCVD and CVD process development for companies, national laboratories, and educational institutions