IceMOS - SiSi Wafers Datasheet

For semiconductor device manufacturers, the IceMOS SiSi bonded wafer offers a cost effective alternative to thick epitaxial layers and inverse epi that have traditionally been used for applications such as power devices and PiN diodes. The use of direct wafer bonding technology allows silicon substrates to be produced containing multiple layers of single crystal silicon. These layers can have a resistivity range 1m?-cm to 10k?-cm., N and P-type and can include combinations of orientations – a feature not possible with conventional epitaxial wafers.