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PAM-XIAMEN - Silicon Carbide Wafer Substrate (SIC)
The company has a complete SiC(silicon carbide) wafer substrate production line integrating crystal growth, crystal processing, wafer processing, polishing, cleaning and testing. Nowadays we supply commercial 4H and 6H SiC wafers with semi insulation and conductivity in on-axis or off-axis, available size:5x5mm2,10x10mm2, 2”,3”,4” and 6”, breaking through key technologies such as defect suppression, seed crystal processing and rapid growth, promoting basic research and development related to silicon carbide epitaxy, devices, etc.
PAM-XIAMEN offers semiconductor SiC wafer Substrate, 6H SiC and 4H SiC (Silicon Carbide) in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology, established a production line to manufacture SiC substrate, Which is applied in GaN epitaxy device (e.g. AlN/GaN HEMT regrowth), power devices, high-temperature device and optoelectronic devices. As a professional silicon carbide wafer company invested by the leading manufacturers from the fields of advanced and high-tech material research and state institutes and China’s Semiconductor Lab, we are devoted to continuously improve the quality of currently SiC substrates and develop large size substrates.
