Silicon Chip Back

Crystal growth method CZ.Article no.P.Doping Boron.Resistivityu.5-3ohm*cm;3-6ohm*cm.Oxygen contentat<l*10M/arf.Carbon contentat<5<1016/cm3.Minority carrier lifetime>10us.Potential difference density<3000/cm2.Perpendicularity of silicon chips" adjacent edges90±0.3°.Crystal orientation100±3°.Dimension156±0.5mm.Diameter20u±0.5mm. Thickness180±20um. TTV