GCL-Poly Energy Holdings Limited products

We provide solar power generation equipment system, including modules, inverters, combiners, framework, tracker and other components. To address the market demand, we provide modular solar farm equipment system, modular solar power generation equipment system for commercial use, as well as solar power generation equipment system on residential rooftops.

GCL Solar Power can implement customized development strategy by capitalizing on GCL brand, its reputation and financial resources, including co-development strategy, to lower development costs in different target markets. GCL Solar Power has good relationship with major enterprises in the PV value chain, which will facilitate the establishment of our project reserves.

Provide high-quality solar grade and semiconductor grade polysilicon raw materials, with N-type resistivity of polysilicon reaching 200 ~ 500 Ω *cm, and purity reaching 9-nines to 11-nines.

After ten years of hard work, GCL Technology has been deeply involved in polysilicon manufacturing for 15 years. It has leveraged its own advantages to explore the research and development of silane fluidized bed technology, acquired the FBR patent and technical team of SunEdison in the United States, and has successfully achieved commercial mass production of granular silicon. At the same time, GCL Technology led the drafting of national standards and industry standards for FBR, making outstanding contributions to filling the gaps in the industry.

Self-developed cold hydrogenation process 250,000 tons/year, the world`s largest single production capacity device. Industry-leading reduction process and coating technology greatly reduce reduction power consumption. Meet the requirements of high-purity polysilicon for high-efficiency N-type single crystals with multiple single crystals in one furnace.

P type or N type. Interstitial oxygen content≤16ppma. Replacement carbon content≤1ppma. Dislocation density≤500cm-2. Surface.

CCz technology is the ultimate technology of Czochralski monocrystalline technology. It has the characteristics of continuous feeding and continuous crystal pulling. Silicon rods have a narrower distribution of resistivity.

S2H1: 157±0.25mm, S2H6: 158.75±0.25mm. Ingot casting by semi-melting method. Low oxygen, carbon concentration. Low metal impurity concentration. Low density of defects such as dislocations, stacking faults, and grain boundaries. Uniform impurity distribution.

S4H6: 158.75±0.25mm. M10: 182.00±0.25mm. Using a new co-doping technology to solve the problem of light decay of polycrystalline cells. Resistivity optimization design, more suitable for PERC high-efficiency battery technology. Optimizing silicon chip size design effectively improves the output power of back-end components. The use of new high-efficiency process high-purity crucible effectively solves the problem.

Upgrade the equipment structure and optimize the production line process to fully match the technical requirements for the processing size of M12 large silicon wafers, and realize the whole process development of M12 silicon wafers from equipment to process.