crystal-wafer Downloads
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Gallium Antimonide Single Crystal Wafers Specifications Growth Method LEC Orientation (100), (111), (211) and (311)±0.5°, or customer required Conduction Type N P Dopant Te None Zn Carrier Concentration (cm-3) ** (2-10)x1017 (1-2)x1017 (3-10)x1017 Mobility (cm2/v.s) (1.5-3.6)x103 (6-8)x102 (5-7)x102 Resistivity (?·cm) (0.2-1.2)x10-2 (5-8)x10-2 Shape Round ...
