SENTECH - Model SI 500 -ICP-RIE Plasma Etch System
The SENTECH SI 500 ICP-RIE System represents advanced inductively coupled plasma reactive ion etching technology, tailored for both research and industrial applications. Its core feature, the proprietary Planar Triple Spiral Antenna (PTSA) plasma source, offers uniform plasma generation with high ion density and low ion energy, making it ideal for low-damage etching of sensors, quantum dots, and HEMT. The system supports high-rate plasma etching of silicon for MEMS with high aspect ratios using room temperature and cryogenic processes. Dynamic temperature control, achieved through a sophisticated substrate electrode combined with He backside cooling and precise backside temperature sensing, ensures optimal process stability across a wide temperature range. This versatility allows the SI 500 to handle a multitude of materials, including compound semiconductors (GaAs, InP), dielectrics, and metals. The modular design accommodates a variety of substrate sizes and configurations, from single wafer vacuum load locks to complex cluster tools, enabling high flexibility and throughput. Advanced control is provided by a reliable PLC and SIA operating software, supporting robust real-time system management.
Low-damage etch
Due to low ion energy and narrow ion energy distribution, low-damage etch and nanostructuring can be performed with SENTECH inductively coupled plasma (ICP) etch tools.
Simple high-rate etch
High-rate plasma etching of Si for MEMS with a high aspect ratio is easily performed either using room temperature alternating processes or cryogenic processes for smooth side walls.
The SENTECH proprietary Plasma Source Technology
The SENTECH Planar Triple Spiral Antenna (PTSA) plasma source is a unique, high-end plasma process system feature. The PTSA source generates uniform plasma with high ion density and low ion energy suited for low-damage etch of sensors, quantum dots, and HEMT. It features high coupling efficiency and very good ignition behaviour for processing a large variety of materials and structures.
Dynamic temperature control
Substrate temperature setting and stability during the plasma etching processes are demanding criteria for high-quality etching. The substrate electrode with dynamic temperature control in combination with He backside cooling and substrate backside temperature sensing provides excellent process conditions over a wide temperature range. Applications like recess and mesa etch in compound semiconductors demonstrate optimal process control, which is necessary for high device performance.