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Sinton - Model WCT-120TS -Temperature-Dependent Lifetime Measurement Instruments for Silicon Wafers
The WCT-120TS (Temperature Stage) instrument showcases the unique measurement and analysis techniques found with our WCT-120 instrument with the added capability to measure the carrier recombination lifetime of silicon wafers at temperatures ranging from 25°C to 200°C. Both the Quasi-Steady-State Photoconductance (QSSPC) lifetime measurement method developed by Sinton Instruments as well as the transient photoconductance decay technique can be used to measure wafer lifetime with this tool.
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Wafer lifetime measurement instrument offering calibrated analysis of temperature-dependent carrier-recombination lifetime.
Primary application:
- Measuring carrier recombination lifetime in silicon wafers at a range of temperatures.
Other Applications:
- Monitoring initial material quality
- Detecting heavy metals contamination during wafer processing
- Evaluating surface passivation and emitter dopant diffusion
- Evaluating process-induced shunting using the implied l-V measurement